JPS6148785B2 - - Google Patents
Info
- Publication number
- JPS6148785B2 JPS6148785B2 JP55142710A JP14271080A JPS6148785B2 JP S6148785 B2 JPS6148785 B2 JP S6148785B2 JP 55142710 A JP55142710 A JP 55142710A JP 14271080 A JP14271080 A JP 14271080A JP S6148785 B2 JPS6148785 B2 JP S6148785B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- thyristor
- voltage
- emitter
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/291—Gate electrodes for thyristors
Landscapes
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55142710A JPS5766668A (en) | 1980-10-13 | 1980-10-13 | 2-gate semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55142710A JPS5766668A (en) | 1980-10-13 | 1980-10-13 | 2-gate semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5766668A JPS5766668A (en) | 1982-04-22 |
JPS6148785B2 true JPS6148785B2 (en]) | 1986-10-25 |
Family
ID=15321763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55142710A Granted JPS5766668A (en) | 1980-10-13 | 1980-10-13 | 2-gate semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5766668A (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01133989U (en]) * | 1988-03-08 | 1989-09-12 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4728449U (en]) * | 1971-03-22 | 1972-12-01 |
-
1980
- 1980-10-13 JP JP55142710A patent/JPS5766668A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01133989U (en]) * | 1988-03-08 | 1989-09-12 |
Also Published As
Publication number | Publication date |
---|---|
JPS5766668A (en) | 1982-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5379089A (en) | Flash control device using cascade-connected thyristor and MOSFET | |
JPS6019147B2 (ja) | ゲ−ト・タ−ン・オフ・サイリスタ | |
JPH0534834B2 (en]) | ||
JPS6148785B2 (en]) | ||
US4951110A (en) | Power semiconductor structural element with four layers | |
JPH03225960A (ja) | 半導体デバイス | |
JPS6155260B2 (en]) | ||
US4623910A (en) | Semiconductor device | |
US3331000A (en) | Gate turn off semiconductor switch having a composite gate region with different impurity concentrations | |
US4357621A (en) | Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions | |
JP2510972B2 (ja) | 双方向サイリスタ | |
JPS5942466B2 (ja) | タ−ンオフサイリスタ | |
JP2557818B2 (ja) | 逆導通ゲ−トタ−ンオフサイリスタ装置 | |
JPH0345536B2 (en]) | ||
US3284681A (en) | Pnpn semiconductor switching devices with stabilized firing characteristics | |
JP3200328B2 (ja) | 複合半導体装置 | |
JPH0427164A (ja) | 半導体装置およびその製造方法ならびに該装置を用いたフラッシュ制御装置 | |
JPH0136262B2 (en]) | ||
JP2797890B2 (ja) | 複合半導体装置 | |
JPH0448024Y2 (en]) | ||
CN119584612A (zh) | 一种精准控制转折电压的自保护电控晶闸管 | |
JPH065739B2 (ja) | 光駆動型半導体制御整流装置 | |
JPS5917864B2 (ja) | 半導体装置 | |
JPS603791B2 (ja) | メサ型ゲ−トタ−ンオフサイリスタ | |
JPH036862A (ja) | ゲートターンオフサイリスタ |